Fabrication and characterization of carbon nanotube triodes

被引:0
|
作者
Hong, Wei-Kai [1 ]
Chen, Kuei-Hsien [2 ]
Chen, Li-Chyong [3 ]
Tarntair, Fu-Gow [1 ]
Chen, Kuo-Ji [1 ]
Lin, Jia-Bin [1 ]
Cheng, Huang-Chung [1 ]
机构
[1] Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan
[2] Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
[3] Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
来源
| 2001年 / Japan Society of Applied Physics卷 / 40期
关键词
Current density - Electric insulators - Field emission displays - Gates (transistor) - Plasma enhanced chemical vapor deposition - Raman spectroscopy - Scanning electron microscopy;
D O I
10.1143/jjap.40.3468
中图分类号
学科分类号
摘要
To achieve high emission current density, carbon nanotube triodes have been proposed using recessed oxide as the insulator between the gate and the carbon nanotubes to replace the conventional spacer. An anode current of 10 μA was achieved with a gate voltage of 98 V for a nanotube sample prepared with a growth time of 12 min. Carbon nanotubes synthesized with various growth times were analyzed using a scanning electron microscope and Raman spectroscopy. By increasing the growth time, longer carbon nanotubes were obtained. Effects of the length of the carbon nanotubes on the field emission of the triodes are discussed. Enhanced luminance was obtained as the anode voltage increased from 600 V to 1000 V. Such carbon nanotube triodes are promising for utilization in future field-emission displays.
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