ZnSe epitaxial growth on zinc- and selenium-treated GaAs(001) surfaces observed by STM

被引：0
|
作者：
Miwa, S. [1 ]
Kimura, K. [1 ]
Yasuda, T. [1 ]
Kuo, L.H. [1 ]
Jin, S. [1 ]
Tanaka, K. [1 ]
Yao, T. [1 ]
机构：
[1] Joint Research Cent for Atom, Technology, Tsukuba, Japan
来源：
Applied Surface Science | 1996年 / 107卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：184 / 188
相关论文
共 25 条
  • [1] ZnSe epitaxial growth on zinc- and selenium-treated GaAs(001) surfaces observed by STM
    Miwa, S
    Kimura, K
    Yasuda, T
    Kuo, LH
    Jin, S
    Tanaka, K
    Yao, T
    APPLIED SURFACE SCIENCE, 1996, 107 : 184 - 188
  • [2] Structural change of selenium-treated GaAs(001) surface observed by STM
    Haga, Y
    Miwa, S
    Morita, E
    APPLIED SURFACE SCIENCE, 1996, 107 : 58 - 62
  • [3] Structural change of selenium-treated GaAs(001) surface observed by STM
    Haga, Y.
    Miwa, S.
    Morita, E.
    Applied Surface Science, 1996, 107 : 58 - 62
  • [4] Epitaxial growth of zinc-blende ZnSe/MgS superlattices on (001) GaAs
    Uesugi, K
    Obinata, T
    Suemune, I
    Kumano, H
    Nakahara, J
    APPLIED PHYSICS LETTERS, 1996, 68 (06) : 844 - 846
  • [5] Epitaxial growth and the electronic structure of MgSe on ZnSe/GaAs (001)
    Feng, P
    Gard, F
    Riley, JD
    Pigram, PJ
    Leckey, R
    Seyller, T
    Ley, L
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2001, 114 : 527 - 532
  • [6] SELECTIVE, MASKLESS GROWTH OF INSB ON SELENIUM-TREATED GAAS BY MOLECULAR-BEAM EPITAXY
    WATANABE, Y
    SCIMECA, T
    MAEDA, F
    OSHIMA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B): : 698 - 701
  • [7] SELENIUM-TREATED GAAS(001)-2X3 SURFACE STUDIED BY SCANNING-TUNNELING-MICROSCOPY
    SHIGEKAWA, H
    OIGAWA, H
    MIYAKE, K
    AISO, Y
    NANNICHI, Y
    HASHIZUME, T
    SAKURAI, T
    APPLIED PHYSICS LETTERS, 1994, 65 (05) : 607 - 609
  • [8] SURFACE-STRUCTURE OF SELENIUM-TREATED GAAS (001) STUDIED BY FIELD-ION SCANNING TUNNELING MICROSCOPY
    SHIGEKAWA, H
    HASHIZUME, T
    OIGAWA, H
    MOTAI, K
    MERA, Y
    NANNICHI, Y
    SAKURAI, T
    APPLIED PHYSICS LETTERS, 1991, 59 (23) : 2986 - 2988
  • [9] Epitaxial growth of zinc blende MgS directly on GaAs (001) substrates
    Rajan, Akhil
    Moug, Richard T.
    Prior, Kevin A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (02)
  • [10] GROWTH-KINETICS IN THE MOVPE OF ZNSE ON GAAS USING ZINC AND SELENIUM ALKYLS
    MITSUHASHI, H
    MITSUISHI, I
    KUKIMOTO, H
    JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 219 - 222
123