GROWTH EFFECTS IN THE HETEROEPITAXY OF III-V COMPOUNDS.

被引：0
|
作者：
Olsen, G.H.
Ettenberg, M.
机构：
来源：
Proceedings of the Society of Photo-Optical Instrumentation Engineers | 1978年 / 2卷
关键词：
PHOTOCATHODES;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The purpose of this chapter is to consider the relationships between elastic strain, dislocations, and the crystal growth of heteroepitaxial III-V compounds prepared by vapor-phase epitaxy (VPE) and liquid-phase epitaxy (LPE). Effects primarily associated with elastic strain only are discussed. Following this, effects associated with misfit dislocations are described. Finally, there is a brief discussion of the optimization of transmission photocathodes.
引用
收藏
页码：1 / 56
相关论文
共 50 条
  • [1] Defect Recognition and Image Processing in III-V Compounds.
    Fillard, Jean-Pierre
    Annales des Telecommunications/Annals of Telecommunications, 1987, 42 (3-4): : 149 - 180
  • [2] ELECTRODISSOLUTION AND PASSIVATION PHENOMENA IN III-V SEMICONDUCTING COMPOUNDS.
    Menezes, S.
    Miller, B.
    Bachmann, K.J.
    1600, (01):
  • [3] SURFACE EFFECTS AND GROWTH DYNAMICS IN MBE OF III-V COMPOUNDS
    JOYCE, BA
    DOBSON, PJ
    NEAVE, JH
    ZHANG, J
    SURFACE SCIENCE, 1986, 178 (1-3) : 110 - 123
  • [4] Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon
    Du, Yong
    Xu, Buqing
    Wang, Guilei
    Miao, Yuanhao
    Li, Ben
    Kong, Zhenzhen
    Dong, Yan
    Wang, Wenwu
    Radamson, Henry H.
    NANOMATERIALS, 2022, 12 (05)
  • [5] THEORETICAL CALCULATIONS OF ELECTRON MOBILITY IN TERNARY III-V COMPOUNDS.
    Harrison, J.W.
    Hauser, J.R.
    1600, (47):
  • [6] HOT CARRIER TRANSIENT RESPONSE IN BULK III-V COMPOUNDS.
    Moore, J.Scott
    Das, P.
    1600, (56):
  • [7] III-V on silicon avalanche photodiodes by heteroepitaxy
    Yuan, Yuan
    Jung, Daehwan
    Sun, Keye
    Zheng, Jiyuan
    Jones, Andrew H.
    Bowers, John E.
    Campbell, Joe C.
    OPTICS LETTERS, 2019, 44 (14) : 3538 - 3541
  • [8] HETEROEPITAXY OF III-V COMPOUNDS ON SI SUBSTRATES FOR SOLAR-CELLS AND LED
    YAMAGUCHI, M
    KONDO, S
    III-V HETEROSTRUCTURES FOR ELECTRONIC / PHOTONIC DEVICES, 1989, 145 : 279 - 286
  • [9] EPITAXIAL-GROWTH OF SB/GASB STRUCTURES - AN EXAMPLE OF V/III-V HETEROEPITAXY
    DURA, JA
    VIGLIANTE, A
    GOLDING, TD
    MOSS, SC
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (01) : 21 - 27
  • [10] HETEROJUNCTIONS BASED ON II-IV-V2 AND III-V COMPOUNDS.
    Anshon, A.V.
    Karpovich, I.A.
    Safonov, A.A.
    Soviet physics journal, 1986, 29 (08): : 672 - 679
12345