Circuit model interpretation of locking characteristics of optically injection-locked semiconductor laser

被引：0

作者：

Iiyama, Koichi ^{[1
]}

Hayashi, Ken-ichi ^{[1
]}

Ida, Yoshio ^{[1
]}

机构：

[1] Kanawaza Univ, Japan

来源：

Memoirs of the Faculty of Technology, Kanazawa University | 1988年 / 21卷 / 02期

关键词：

Optics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Locking characteristics of an optically injection-locked semiconductor laser are derived by help of a simplified eqivalent circuit model, in which the spontaneous emission and the relaxation oscillation are neglected. In the model it is also assumed that the injection gain is so high that the equivalent admittance of the laser can be linearized and the external injection can be expressed by equivalent admittance. Under these assumptions, the symmetric locking bandwidth can be easily derived and is characterized by an inclination angle between the device line representing laser active medium and the circuit line determined by laser cavity parameters. Validity of the circuit model is confirmed by comparing our results with those obtained from other theories.

引用

页码：31 / 35