CHARGE STORAGE JUNCTION FIELD-EFFECT TRANSISTOR.

被引：0
|
作者：
Arai, M.
机构：
来源：
| 1973年
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：72 / 74
相关论文
共 50 条
  • [1] CHARGE-STORAGE JUNCTION FIELD-EFFECT TRANSISTOR
    ARAI, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) : 181 - 185
  • [2] FIELD-EFFECT TRANSISTOR.
    Anon
    1600, (28):
  • [3] delta -DOPED FIELD-EFFECT TRANSISTOR.
    Schubert, E.F.
    Ploog, K.
    Japanese Journal of Applied Physics, Part 2: Letters, 1985, 24 (08): : 608 - 610
  • [4] INFLUENCE OF DIFFUSION CURRENT ON THE dc AND ac CHARACTERISTICS OF THE JUNCTION FIELD-EFFECT TRANSISTOR.
    Turchetti, C.
    Masetti, G.
    1600, (EDL-6):
  • [5] DISTRIBUTED MODEL OF MICROWAVE FIELD-EFFECT TRANSISTOR.
    Moskalyuk, V.A.
    Timofeev, V.I.
    Shovkun, I.D.
    Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Z, 1986, 29 (06): : 82 - 84
  • [6] HIGH-CURRENT FIELD-EFFECT TRANSISTOR.
    Jambotkar, C.G.
    IBM technical disclosure bulletin, 1985, 27 (08): : 4634 - 4637
  • [7] The electrochemical carbon nanotube field-effect transistor.
    Schoenenberger, C
    Krueger, M
    Buitelaar, M
    Nussbaumer, T
    Forro, L
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 221 : U587 - U587
  • [8] THERMODYNAMIC EQUATIONS FOR GATE CHARGE STORAGE ON A FIELD-EFFECT TRANSISTOR
    WIDOM, A
    CLARK, TD
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (12) : L181 - L182
  • [9] Graphene Junction Field-Effect Transistor
    Ou, Tzu-Min
    Borsa, Tomoko
    Van Zeghbroeck, Bart
    2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2015, : 139 - 140
  • [10] SUBSURFACE JUNCTION FIELD-EFFECT TRANSISTOR
    MALHI, SDS
    SALAMA, CAT
    DONNISON, WR
    BARBER, HD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) : 1447 - 1454
12345