IrO2/Pb(ZrxTi1-x)O3(PZT)/Pt ferroelectric thin-film capacitors resistant to hydrogen-annealing damage

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作者：
Kushida-Abdelghafar, Keiko [1 ]
Miki, Hiroshi [1 ]
Yano, Fumiko [1 ]
Fujisaki, Yoshihisa [1 ]
机构：
[1] Hitachi Ltd, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 8 A期
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