未找到相关数据
Electron irradiation effects in silicon at liquid helium temperatures using ac hopping conductivity
被引：4
作者：
MCKEIGHEN RE
KOEHLER JS
机构：
来源：
Radiation Effects
|
1971年
/
9卷
/
1-2期
关键词：
SEMICONDUCTORS;
Electric Properties - SEMICONDUCTORS;
Irradiation;
-;
Low Temperature Properties;
D O I：
10.1080/00337577108242033
中图分类号：
学科分类号：
摘要：
In the p- type crystals, the changes in a c hopping conductivity depended strongly on the concentration of chemical acceptors, indicating a concentration dependence on impurities of the defect production rate. A small amount of 'reverse annealing', i. e. , an increase in a c hopping conductivity was observed below 30 K.
引用
收藏
页码：59 / 64
相关论文