共 50 条
- [2] CHARACTERIZATION OF ETCH-INDUCED DAMAGE FOR SI ETCHED IN CL-2 PLASMA GENERATED BY AN ELECTRON-CYCLOTRON-RESONANCE SOURCE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1346 - 1350
- [3] EVALUATION OF SURFACE DAMAGE ON GAAS ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3382 - 3387
- [5] LOW DAMAGE DRY ETCHING OF III-V COMPOUND SEMICONDUCTORS USING ELECTRON-CYCLOTRON RESONANCE DISCHARGES NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1015 - 1018
- [6] ETCHED PROFILE DISTORTIONS IN HIGH-DENSITY ELECTRON-CYCLOTRON-RESONANCE PLASMA JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3363 - 3368
- [7] Effect plasma transport on etched profiles with surface topography in diverging field electron cyclotron resonance plasma Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 B): : 2164 - 2169
- [8] Characterization of a permanent magnet electron cyclotron resonance plasma source Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 1991, 9 (01): : 26 - 28