High-efficiency InP-based HEMT MMIC power amplifier for Q-band applications

被引：1
|
作者：
Lam, W. [1 ]
Matloubian, M. [1 ]
Kurdoghlian, A. [1 ]
Larson, L. [1 ]
Igawa, A. [1 ]
Chou, C. [1 ]
Jelloian, L. [1 ]
Brown, A. [1 ]
Thompson, M. [1 ]
Ngo, C. [1 ]
机构：
[1] Hughes Microelectronic Circuits Div, Torrance, United States
来源：
IEEE Microwave and Guided Wave Letters | 1993年 / 3卷 / 11期
关键词：
Antenna phased arrays - Curve fitting - Efficiency - Electric network parameters - Electromagnetic wave scattering - High electron mobility transistors - Integrated circuits - Microwave devices - Performance - Semiconducting indium phosphide - Semiconductor device models - Semiconductor device structures;
D O I：
10.1109/75.248519
中图分类号：
学科分类号：
摘要：
Advanced millimeter-wave systems require high-efficiency MMIC power amplifiers to reduce physical size, weight, and prime power consumption. A high-efficiency MMIC power amplifier was developed using 0.15 um InP-based (Al0.48In0.52As/Ga0.47 In0.53 As) HEMT MMIC technology. The amplifier demonstrated state-of-the-art power performance, including 33% power-added efficiency and 24 dBm output power at 44 GHz. Potential applications include communication terminals and phased array antennas.
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页码：420 / 422
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