ANALYSIS OF NONPLANAR DSA MOS (V-MOS) TRANSISTOR BY CAPACITANCE MEASUREMENTS.

被引：0

|

作者：

Ohashi, Hiroshi ^{[1
]}

Fujita, Takeshi ^{[1
]}

Tarui, Yasuo ^{[1
]}

机构：

[1] Tokyo Univ of Agriculture &, Technology, Koganei, Jpn, Tokyo Univ of Agriculture & Technology, Koganei, Jpn

来源：

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) | 1987年 / 70卷 / 12期

关键词：

DIFFUSION SELF-ALIGNED (DSA) TRANSISTOR - DRAIN EDGE PROFILE - LATERAL IMPURITY PROFILE - V-MOSFET;

D O I：

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学科分类号：

摘要：

(Edited Abstract)

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页码：47 / 58

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