POSSIBLE METHOD OF REDUCING THE NOISE OF OSCILLATORS USING IMPATT AND GUNN DIODES.

被引：0

作者：

Venger, A.Z.

Gavrilova, N.I.

Yakimenko, A.M.

机构：

来源：

Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 1980年 / 34-35卷 / 02期

关键词：

Compendex;

D O I：

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学科分类号：

摘要：

OSCILLATORS, SOLID STATE

引用

页码：95 / 96

共 40 条

[1] A POSSIBLE METHOD OF REDUCING THE NOISE OF OSCILLATORS USING IMPATT AND GUNN-DIODES
VENGER, AZ
GAVRILOVA, NI
YAKIMENKO, AM
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1980, 34-5 (02) : 95 - 96
[2] EXPERIMENTAL STUDY OF NOISE GENERATORS IN THE MILLIMETRIC RANGE USING GUNN DIODES.
Koryakin, N.D.
Skulachev, D.P.
Strukov, I.A.
Yurchuk, E.F.
Measurement Techniques, 1986, 29 (02) : 137 - 141
[3] NOISE CHARACTERISTICS OF SI IMPATT-DIODES OSCILLATORS
GERSHENZON, EM
LEVITES, AA
SMETANIN, AI
RADIOTEKHNIKA I ELEKTRONIKA, 1987, 32 (12): : 2623 - 2631
[4] Noise characteristics of oscillators employing silicon IMPATT diodes
Gershenzon, Ye.M.
Levites, A.A.
Smetanin, A.I.
Soviet journal of communications technology & electronics, 1988, 33 (05): : 29 - 37
[5] Microstrip oscillators using multistructure IMPATT diodes
Agal'tsova, Yu.A.
Petrov, B.Ye.
Sibirtsev, L.S.
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1987, 41-42 (12): : 56 - 61
[6] MICROSTRIP OSCILLATORS USING MULTISTRUCTURE IMPATT DIODES
AGALTSOVA, YA
PETROV, BY
SIBIRTSEV, LS
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1987, 41-2 (12) : 56 - 61
[7] QUASI-OPTICAL MILLIMETER BAND POWER COMBINER USING GUNN DIODES.
Borodkin, A.I.
Bulgakov, B.M.
Chernyshov, I.Yu.
Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Z, 1987, 30 (10): : 70 - 72
[8] LOW-FREQUENCY OSCILLATIONS IN OSCILLATORS USING GUNN DIODES
RAKSHIT, PC
PARIA, H
NAG, BR
INTERNATIONAL JOURNAL OF ELECTRONICS, 1973, 35 (04) : 529 - 532
[9] GaAs W-band impatt diodes for very low-noise oscillators
Eisele, H.
Electronics Letters, 1990, 26 (02): : 109 - 110
[10] GAAS W-BAND IMPATT DIODES FOR VERY LOW-NOISE OSCILLATORS
EISELE, H
ELECTRONICS LETTERS, 1990, 26 (02) : 109 - 110

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