Electrical properties of PZT thin film capacitors with novel Pt-Ir based electrode barriers for nonvolatile memories

被引：0
|
作者：
Desu, Chandra S. [1 ]
Vedula, Ramakrishna [1 ]
Lee, Kwang B. [2 ]
Desu, Seshu B. [1 ]
机构：
[1] Department of Materials Science and Engineering, Virginia Tech., Blacksburg, VA 24061-0237, United States
[2] Department of Physics, Sangji University, Wonju, Kangwondo 220-702, Korea, Republic of
来源：
Materials Research Society Symposium - Proceedings | 1999年 / 541卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：71 / 76
相关论文
共 34 条
  • [31] A low loss flexural plate wave (FPW) device through enhanced properties of sol-gel PZT (52/48) thin film and stable TiN-Pt bottom electrode
    Sekhar, Praveen Kumar
    Akella, Sriram
    Bhansali, Shekhar
    SENSORS AND ACTUATORS A-PHYSICAL, 2006, 132 (01) : 376 - 384
  • [32] Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O3 thin-film capacitors with Pt- or Ir-based top electrodes
    Soon-Gil Yoon
    Dwi Wicaksana
    Dong-Joo Kim
    Seung-Hyun Kim
    A. I. Kingon
    Journal of Materials Research, 2001, 16 : 1185 - 1189
  • [33] Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O3 thin-film capacitors with Pt- or Ir-based top electrodes
    Yoon, SG
    Wicaksana, D
    Kim, DJ
    Kim, SH
    Kingon, AI
    JOURNAL OF MATERIALS RESEARCH, 2001, 16 (04) : 1185 - 1189
  • [34] Film thickness dependence of electrical properties for Pb(Zr,Ti)O3 thin films prepared on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si substrates by pulsed-metalorganic chemical vapor deposition
    Oikawa, T
    Funakubo, H
    Morioka, H
    Saito, K
    INTEGRATED FERROELECTRICS, 2003, 59 : 1421 - 1428
1234