Electrical properties of PZT thin film capacitors with novel Pt-Ir based electrode barriers for nonvolatile memories

被引：0
作者：
Desu, Chandra S. [1 ]
Vedula, Ramakrishna [1 ]
Lee, Kwang B. [2 ]
Desu, Seshu B. [1 ]
机构：
[1] Department of Materials Science and Engineering, Virginia Tech., Blacksburg, VA 24061-0237, United States
[2] Department of Physics, Sangji University, Wonju, Kangwondo 220-702, Korea, Republic of
来源：
Materials Research Society Symposium - Proceedings | 1999年 / 541卷
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页码：71 / 76
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