Optimized resonant tunneling light emitting diodes

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机构：
[1] Kindlihagen, A.
[2] Willander, M.
[3] Chao, K.A.
来源：
Kindlihagen, A. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 78期
关键词：
Boundary conditions - Charge carriers - Current density - Electron energy levels - Electron tunneling - Electrons - Interfaces (materials) - Mathematical models - Optimization - Partial differential equations - Semiconducting aluminum compounds;
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摘要：
Bipolar double barrier resonant tunneling structures have been recognized as a favorable system for the resonant tunneling light emitting diode (RTLED). While the operation principle of a RTLED is straightforward, the optimization of its performance needs to fulfill at least three conditions. In the study, presented is a calculation of a self-consistently coupled Schrodinger equation for the conduction electrons, the heavy holes and the light holes, and the Poisson equation. In the following AlxGa1-xAs DBRTS is used as an example to demonstrate how to optimize a RTLED. Presented are the results for zero temperature in order to demonstrate unambiguously the physical process involved.
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