STACKED DENSE CMOS RAM USING SILICON ON INSULATOR TECHNOLOGY.

A dense, low power, fast static RAM (random-access memory) is fabricated using silicon on insulator technology. The device uses a stacked CMOS flip-flop as the storage element and stacked N or P channel field-effect transistors (FETs) as the transfer devices. A first set of devices is formed in silicon, while a second set is formed in recrystallized polysilicon. The recrystallized polysilicon devices overlie the silicon devices to form the stacked RAM, with shared common gates.