Magnetoresistance in a room temperature ferromagnetic diluted magnetic semiconductor Zn1-xCrxTe

被引：0

作者：

Saito, H. ^{[1
]}

Yamagata, S. ^{[1
,2
]}

Ando, K. ^{[1
]}

机构：

[1] NanoElectronics Research Institute, AIST, Tsukuba Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan

[2] Toho University, Funabashi, Chiba, 274-0072, Japan

来源：

Journal of Applied Physics | 2004年 / 95卷 / 11 II期

关键词：

Binding energy - Carrier mobility - Electric conductivity - Electric currents - Electrodes - Ferromagnetic materials - Ferromagnetism - Magnetic field effects - Magnetic hysteresis - Magnetization - Magnetoresistance - Molecular beam epitaxy - Semiconducting zinc compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A negative magnetoresistance (MR) in a Zn1-xCrxTe with room temperature (RT) ferromagnetism was analyzed. In a magnetic field of 10 kOe, the MR ratio was -26% and showed a clear hysteresis loop. It was expected that the transport properties of Zn1-xCrxTe sensitively depended on the magnetic field due to the sp-d exchange interaction. The results show that the electrical properties of Zn1-xCr xTe are strongly affected by its magnetic properties through a strong carrier-spin interaction.

引用

页码：7175 / 7177

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