Step structure transformation induced by DC on vicinal Si(111)

被引：0
|
作者：
Natori, Akiko [1 ]
机构：
[1] Univ of Electro-Communications, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 6 A期
关键词：
Atomic physics - Atoms - Diffusion - Epitaxial growth - Evaporation - Surfaces;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The step structure transformation between a regular step and a bunching structure on Si(111) induced by DC is studied by means of the extended BCF (Burton Cabrela Frank) theory, in which surface electromigration of Si adatoms is considered. The stability condition of a regular step under DC supply is clarified, in addition to that under AC supply. In the unstable condition, the step bunch grows from a small fluctuation of a regular step. The dynamics of the step structure transformation under DC are investigated by solving the kinetic equations on step positions at typical temperatures, and the associated bunching mechanisms are proposed based on the competition among the drift, evaporation and backward diffusion fluxes.
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页码：3538 / 3544
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