Molecular-beam-epitaxial growth of Ga1-xInxSb on GaAs substrates

被引：0
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作者：
Roslund, J.H. [1 ]
Zsebok, O. [1 ]
Swenson, G. [1 ]
Andersson, T.G. [1 ]
机构：
[1] Chalmers Univ of Technology, Gothenburg, Sweden
来源：
Journal of Crystal Growth | 1997年 / 175-176卷 / pt 2期
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页码：883 / 887
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