Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property

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Tokyo Inst of Technology, Yokohama, Japan [1 ]
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J Cryst Growth | / 1-2卷 / 67-72期
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This research was partially supported by Research for the Future program #[!text type='JS']JS[!/text]PS-RFTF96P00101 from the Japan Society for the Promotion of Science; and sponsored by Grant-in-Aid for COE research from the Ministry of Education; Science; Sports and Culture (#07CE2003; Ultra-parallel Optoelectronics);
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