4-GHz BAND GaAs MONOLITHIC LIMITING AMPLIFIER.

被引：0

作者：

Wakimoto, Tsutomu ^{[1
]}

Akazawa, Yukio ^{[1
]}

Kawarada, Kuniyasu ^{[1
]}

机构：

[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn

来源：

| 1600年 / SC-21期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

OPTICAL COMMUNICATION EQUIPMENT

引用

共 50 条

[21] 20-GHZ BAND MONOLITHIC GAAS-FET LOW-NOISE AMPLIFIER
HIGASHISAKA, A
MIZUTA, T
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (01) : 1 - 6
[22] MINIATURIZED GaAs FET AMPLIFIER.
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Fujitsu Scientific and Technical Journal, 1980, 16 (02): : 77 - 93
[23] L-BAND CRYOGENICALLY-COOLED GAAS FET AMPLIFIER.
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Microwave journal, 1980, 23 (10): : 73 - 76
[24] 0.5 to 4 GHz true logarithmic amplifier utilizing monolithic GaAs MESFET technology
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IEEE Transactions on Microwave Theory and Techniques, 1988, 36 (12): : 1986 - 1990
[25] A monolithic 24.9 GHz limiting amplifier using 0.2 mu m-AlGaAs/GaAs-HEMTs
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[26] ULTRA-BROAD-BAND GAAS MONOLITHIC AMPLIFIER
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[27] UHF GAAS BROAD-BAND MONOLITHIC AMPLIFIER
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[28] MINIATURIZATION OF A BAND-X MONOLITHIC GAAS AMPLIFIER
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[29] MINIATURIZATION OF A BAND-X MONOLITHIC GAAS AMPLIFIER
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[30] ULTRA-BROAD-BAND GAAS MONOLITHIC AMPLIFIER
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