Fabrication of GeSi heterojunction infrared detectors with wavelength of 1.3 - 1.55 μm

被引:0
|
作者
Jiang, Ruolian
机构
来源
Gaojishu Tongxin/High Technology Letters | 1996年 / 6卷 / 11期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3-1.55 μm
    Lobanov, D. N.
    Novikov, A. V.
    Kudryavtsev, K. E.
    Yablonskiy, A. N.
    Antonov, A. V.
    Drozdov, Yu. N.
    Shengurov, D. V.
    Shmagin, V. B.
    Krasilnik, Z. F.
    Zakharov, N. D.
    Werner, P.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 41 (06): : 935 - 938
  • [3] GeSi infrared detectors
    Strong, R
    Greve, DW
    Misra, R
    Weeks, M
    Pellegrini, P
    THIN SOLID FILMS, 1997, 294 (1-2) : 343 - 346
  • [4] SOI waveguide GeSi avalanche pin photodetector at 1.3 μm wavelength
    Yoshimoto, T
    Thomas, SG
    Wang, KL
    Jalali, B
    IEICE TRANSACTIONS ON ELECTRONICS, 1998, E81C (10) : 1667 - 1669
  • [5] 1.3—1.55μm GeSi异质结红外探测器的研制
    江若琏,顾书林,江宁,李钊,徐军,郑有枓,许培英
    高技术通讯, 1996, (11) : 13 - 15
  • [6] 1.3μm and 1.55μm Si and Si1-xGex wavelength signal divider
    Lizi Jiaohuan Yu Xifu, 5 (297-301):
  • [7] Wavelength-Selective Receiver for Simultaneous λ=1.3 μm and λ=1.55 μm RF Optical Transmission
    Poloczek, Artur
    Muenstermann, Benjamin
    Nannen, Ingo
    Regolin, Ingo
    Tegude, Franz-Josef
    2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, : 295 - 297
  • [8] GUIDED WAVE 1.3/1.55MU-M WAVELENGTH DUPLEXERS IN INGAASP/INP
    WALKER, RG
    URQUHART, J
    BENNION, I
    CARTER, AC
    5TH EUROPEAN CONFERENCE ON INTEGRATED OPTICS: HELD IN CONJUNCTION WITH ECO2, 1989, 1141 : 219 - 226
  • [9] GeSi infrared detectors using selective deposition
    Strong, R
    Greve, DW
    Weeks, MM
    SILICIDE THIN FILMS - FABRICATION, PROPERTIES, AND APPLICATIONS, 1996, 402 : 443 - 448
  • [10] Design and fabrication of GeSi/Si strained layer superlattice waveguide PIN photodetectors at λ=1.3 μm
    Wan, Jianjun
    Li, Guozheng
    Li, Na
    Xu, Xuelin
    Liu, Enke
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1998, 19 (08): : 597 - 602