Kinetic study on tungsten deposition from SiH4 and WF6

被引：0
|
作者：
机构：
来源：
| 1600年 / 72期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] A KINETIC-STUDY ON TUNGSTEN DEPOSITION FROM SIH4 AND WF6
    VANDERJEUGD, CA
    JANSSEN, GCAM
    RADELAAR, S
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (04) : 1583 - 1588
  • [2] Nucleation of tungsten by chemical vapor deposition from WF6 and SiH4
    Kajikawa, Y.
    Tsumura, T.
    Noda, S.
    Komiyama, H.
    Shimogaki, Y.
    Dig. Pap. - Int. Microprocess. Nanotechnol. Conf., MNC, 1600, (256-257):
  • [3] Laser processing of tungsten from WF6 and SiH4
    Meunier, Michel, 1600, Elsevier Science B.V., Amsterdam, Netherlands (86):
  • [4] LASER PROCESSING OF TUNGSTEN FROM WF6 AND SIH4
    MEUNIER, M
    DESJARDINS, P
    TABBAL, M
    ELYAAGOUBI, N
    IZQUIERDO, R
    YELON, A
    APPLIED SURFACE SCIENCE, 1995, 86 (1-4) : 475 - 483
  • [5] Deposition of Wsix film from preactivated mixture of WF6/ SiH4
    Saito, Takeyasu, 1600, Publ by JJAP, Minato-ku, Japan (33):
  • [6] DEPOSITION OF WSIX FILMS FROM PREACTIVATED MIXTURE OF WF6/SIH4
    SAITO, T
    SHIMOGAKI, Y
    EGASHIRA, Y
    KOMIYAMA, H
    YUYAMA, Y
    SUGAWARA, K
    TAKAHIRO, K
    NAGATA, S
    YAMAGUCHI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 275 - 279
  • [7] Nucleation of W during chemical vapor deposition from WF6 and SiH4
    Kajikawa, Y
    Tsumura, T
    Noda, S
    Komiyama, H
    Shimogaki, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (6B): : 3945 - 3950
  • [8] Nucleation of W during chemical vapor deposition from WF6 and SiH4
    Kajikawa, Yuya
    Tsumura, Takeshi
    Noda, Suguru
    Komiyama, Hiroshi
    Shimogaki, Yukihiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2004, 43 (6 B): : 3945 - 3950
  • [9] Si consumption in selective chemical vapor deposition of tungsten using SiH4 reduction of WF6
    Takahashi, M
    Takayama, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (04) : G229 - G231
  • [10] Influence of SiH2Cl2 on the kinetics of the chemical vapor deposition of tungsten by SiH4 reduction of WF6
    Jongste, JF
    Oosterlaken, TGM
    Janssen, GCAM
    Radelaar, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (01) : 167 - 169
12345