EFFECT OF POST-OXYGEN-IMPLANT ANNEALING TEMPERATURE ON THE CHANNEL MOBILITIES OF CMOS DEVICES IN OXYGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES.

被引：0

作者：

Mao, Bor-Yen ^{[1
]}

Matloubian, Mishel ^{[1
]}

Chen, Cheng-Eng ^{[1
]}

Sundaresan, R. ^{[1
]}

Slawinski, C. ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA

来源：

Electron device letters | 1987年 / EDL-8卷 / 07期

关键词：

ELECTRON AND HOLE MOBILITIES - OXYGEN-IMPLANTED SILICON-ON-INSULATOR SUBSTRATES - POST-OXYGEN-IMPLANT ANNEALING TEMPERATURE - SILICON/BURIED-OXIDE INTERFACE;

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学科分类号：

摘要：

引用

页码：306 / 308