Growth of thick and pure cubic GaN on (001) GaAs by halide VPE

被引：0
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作者：
Tsuchiya, Harutoshi [1 ]
Sunaba, Kenji [1 ]
Suemasu, Takashi [1 ]
Hasegawa, Fumio [1 ]
机构：
[1] Institute of Materials Science, University of Tsukuba, 1-1-1 Tennoh-Dai, Tsukuba City, Ibaraki 305-8573, Japan
来源：
Journal of Crystal Growth | 1999年 / 198-199卷 / pt 2期
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页码：1056 / 1060
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