Structural investigation of InGaAs/InP quantum wire array using triple-axis X-ray diffractometry

被引：0
|
作者：
Inst of Semiconductors, The Chinese Acad of Sciences, Beijing, China [1 ]
机构：
来源：
Pan Tao Ti Hsueh Pao | / 1卷 / 61-65期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
7
引用
收藏
相关论文
共 50 条
  • [1] Structural Investigation of InGaAs/InP Quantum Wire Array Using Triple-Axis X-ray Diffractometry
    Ma Wenquan
    半导体学报, 1998, (01) : 3 - 5
  • [2] STRUCTURAL INVESTIGATION OF II-VI COMPOUND SEMICONDUCTOR QUANTUM WIRES USING TRIPLE-AXIS X-RAY-DIFFRACTOMETRY
    DARHUBER, AA
    STRAUB, H
    FERREIRA, S
    FASCHINGER, W
    KOPPENSTEINER, E
    BRUNTHALER, G
    BAUER, G
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 775 - 778
  • [3] Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
    Metzger, T
    Hopler, R
    Born, E
    Ambacher, O
    Stutzmann, M
    Stommer, R
    Schuster, M
    Gobel, H
    Christiansen, S
    Albrecht, M
    Strunk, HP
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1998, 77 (04): : 1013 - 1025
  • [4] Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
    Philosophical Magazine A: Physics of Condensed Matter: Structure, Defects and Mechanical Properties, 77 (04):
  • [5] Triple-axis X-ray diffraction analyses of lysozyme crystals
    Volz, HM
    Matyi, RJ
    ACTA CRYSTALLOGRAPHICA SECTION D-BIOLOGICAL CRYSTALLOGRAPHY, 2000, 56 : 881 - 889
  • [6] X-ray triple-axis diffractometry investigation of Si/SiGe/Si on silicon-on-insulator subjected to in situ low-temperature annealing
    Ma, T. D.
    Tu, H. L.
    Hu, G. Y.
    Shao, B. L.
    Liu, A. S.
    APPLIED SURFACE SCIENCE, 2006, 253 (01) : 124 - 127
  • [7] Characterization of porous InP(001) layers by triple-crystal X-ray diffractometry
    A. A. Lomov
    D. Yu. Prokhorov
    R. M. Imamov
    D. Nohavica
    P. Gladkov
    Crystallography Reports, 2006, 51 : 754 - 760
  • [8] Characterization of porous InP(001) layers by triple-crystal X-ray diffractometry
    Lomov, A. A.
    Prokhorov, D. Yu.
    Imamov, R. M.
    Nohavica, D.
    Gladkov, P.
    CRYSTALLOGRAPHY REPORTS, 2006, 51 (05) : 754 - 760
  • [9] INVESTIGATION OF INTERFACES IN GAINAS/INP SUPERLATTICES BY X-RAY MULTIPLE CRYSTAL DIFFRACTOMETRY
    LYONS, MH
    SCOTT, EG
    HALLIWELL, MAG
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 473 - 478
  • [10] INVESTIGATION OF INTERFACES IN GAINAS/INP SUPERLATTICES BY X-RAY MULTIPLE CRYSTAL DIFFRACTOMETRY
    LYONS, MH
    SCOTT, EG
    HALLIWELL, MAG
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 473 - 478
12345