INSTRUMENT FOR MEASURING CURRENT-CARRIER DENSITY DISTRIBUTIONS IN SEMICONDUCTORS.

被引:0
|
作者
VITKUS, A.M.
LAURINAVICHYUS, A.K.
POZHELA, YU.K.
YASHINSKAS, P.A.P.
机构
来源
| 1982年 / V 25卷 / N 1 PT 2期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
SEMICONDUCTOR MATERIALS - CHARGE CARRIERS
引用
收藏
页码:243 / 246
相关论文
共 50 条
  • [21] TIME AND FIELD DEPENDENCE OF EXCESS CARRIER CONCENTRATION IN SEMICONDUCTORS.
    Schacham, S.E.
    Infrared Physics, 1986, 26 (04): : 201 - 208
  • [22] IMPURITY DISTRIBUTIONS AND p-n JUNCTIONS IN SEMICONDUCTORS.
    Fekete, Denes
    Solid-State Electronics, 1984, 27 (07) : 607 - 615
  • [23] CARRIER-DENSITY DEPENDENCE OF DYNAMIC MULTIPHONON NONRADIATIVE RECOMBINATION THROUGH DEEP LEVELS IN SEMICONDUCTORS.
    Sumi, H.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 39 - 44
  • [24] VOLTAGE FLUCTUATIONS ASSOCIATED WITH CARRIER DRIFT IN ANISOTROPIC SEMICONDUCTORS.
    Tarasenko, A.A.
    Tomchuk, P.M.
    Chumak, A.A.
    1978, 12 (09): : 1052 - 1055
  • [25] CHARACTERISTIC FEATURES OF THE DEVELOPMENT OF CURRENT FILAMENTS IN SEMICONDUCTORS.
    Gorelenok, A.T.
    Mamutin, V.V.
    Prikhod'ko, A.V.
    Soviet physics. Semiconductors, 1984, 18 (08): : 866 - 867
  • [26] CHANGE IN THE CURRENT-CARRIER CONCENTRATION UPON DOPING PBTE WITH GALLIUM
    BUSHMARINA, GS
    GRUZINOV, BF
    DRABKIN, IA
    LEV, EY
    MOIZHES, BY
    SUPRUN, SG
    INORGANIC MATERIALS, 1987, 23 (02) : 195 - 200
  • [27] ″THERMAL-CURRENT″ INSTABILITY IN COMPENSATED SEMICONDUCTORS.
    Kazarinov, R.F.
    Suris, R.A.
    Fuks, B.I.
    1600, (06):
  • [28] Barrier-Controlled Carrier Transport in Structures with Amorphous Semiconductors.
    Haiduk, A.
    Kottwitz, A.
    Stoetzel, H.
    Teubner, W.
    Nachrichtentechnik Elektronik, 1979, 29 (02): : 67 - 70
  • [29] SECONDARY EMISSION STUDIES OF HOT CARRIER RELAXATION IN POLAR SEMICONDUCTORS.
    Kash, J.A.
    Tsang, J.C.
    1600, (31): : 3 - 4
  • [30] INSTABILITY OF THE CURRENT IN HIGH-RESISTIVITY COMPENSATED SEMICONDUCTORS.
    Baranenkov, A.I.
    1972, 5 (10): : 1765 - 1767