Growth of indium on the H-terminated Si(111) 1 × 1 surface

被引：0
|
作者：
Dep of Materials, Oxford, United Kingdom [1 ]
机构：
来源：
Surf Sci | / 1卷 / 25-36期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Surfaces
引用
收藏
相关论文
共 50 条
  • [1] The growth of indium on the H-terminated Si(111) 1x1 surface
    Leisenberger, FP
    Ofner, H
    Ramsey, MG
    Netzer, FP
    SURFACE SCIENCE, 1997, 383 (01) : 25 - 36
  • [2] Growth of Ge on H-terminated Si(111) surface
    Ishii, K
    Kuriyama, H
    Ezoe, K
    Yamamoto, T
    Ikeda, M
    Matsumoto, S
    THIN SOLID FILMS, 1998, 336 (1-2) : 34 - 37
  • [3] Growth of Ge on H-terminated Si(111) surface
    Ishii, K
    Kuriyama, H
    Ezoe, K
    Yamamoto, T
    Ikeda, M
    Matsumoto, S
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 34 - 37
  • [4] VLS growth of Si nanowhiskers on a H-terminated Si{111} surface
    Ozaki, N
    Ohno, Y
    Takeda, S
    Hirata, M
    MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS-1998, 1999, 536 : 305 - 310
  • [5] VLS growth of Si nanowhiskers on a H-terminated Si{111} surface
    Mater Res Soc Symp Proc, (305-310):
  • [6] VLS growth of Si nanowhiskers on a H-terminated Si{111} surface
    Ozaki, N.
    Ohno, Y.
    Takeda, S.
    Hirata, M.
    Materials Research Society Symposium - Proceedings, 1999, 536 : 305 - 310
  • [7] Electronic structure of the ideally H-terminated Si(111)-(1X1) surface
    Gallego, S
    Avila, J
    Martin, M
    Blase, X
    Taleb, A
    Dumas, P
    Asensio, MC
    PHYSICAL REVIEW B, 2000, 61 (19): : 12628 - 12631
  • [8] Growth of Mg films on H-terminated Si (111)
    Saiki, K
    Nishita, K
    Ariga, Y
    Koma, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (05): : 2911 - 2914
  • [9] LINESHAPE OF THE SI-H STRETCHING VIBRATION FOR THE IDEALLY H-TERMINATED SI(111)1 BY 1
    DUMAS, P
    CHABAL, YJ
    HIGASHI, GS
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1990, 54 : 103 - 108
  • [10] Atomistic investigation on the initial stage of growth and interface formation of Fe on H-terminated Si(111)-(1 x 1) surface
    Kawaguchi, Ryo
    Eguchi, Toyoaki
    Suto, Shozo
    SURFACE SCIENCE, 2019, 686 : 52 - 57
12345