Fabrication and optical properties of CdTe/CdZnTe quantum wires and dots

被引：0

作者：

Mariette, H. ^{[1
]}

Gourgon, C. ^{[1
]}

Dang, L.S. ^{[1
]}

Vieu, C. ^{[1
]}

Pelekanos, N. ^{[1
]}

Ruhle, W.W. ^{[1
]}

机构：

[1] Universite J. Fourier, Grenoble, France

来源：

Materials Science Forum | 1995年 / 182-184卷

关键词：

Anodic oxidation - Crystal defects - Electron beam lithography - Etching - Molecular beam epitaxy - Nanostructured materials - Optical properties - Semiconducting cadmium compounds - Semiconductor device manufacture - Semiconductor quantum dots - Semiconductor quantum wires - Semiconductor superlattices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We review two approaches to fabricate CdTe based nanostructures. The first one is based on etching techniques with a new process step consisting in a controlled etch by anodic oxidation. We show that narrow quantum wires and dots can be fabricated using this process with high optical quality for wires smaller than 100 nm. The second one is based on a strain confinement effect achieved by the growth of a quantum well on a (110) cleaved surface on top of a strained superlattice.

引用

页码：99 / 104

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