Fabrication and optical properties of CdTe/CdZnTe quantum wires and dots

被引：0
|
作者：
Mariette, H. [1 ]
Gourgon, C. [1 ]
Dang, L.S. [1 ]
Vieu, C. [1 ]
Pelekanos, N. [1 ]
Ruhle, W.W. [1 ]
机构：
[1] Universite J. Fourier, Grenoble, France
来源：
Materials Science Forum | 1995年 / 182-184卷
关键词：
Anodic oxidation - Crystal defects - Electron beam lithography - Etching - Molecular beam epitaxy - Nanostructured materials - Optical properties - Semiconducting cadmium compounds - Semiconductor device manufacture - Semiconductor quantum dots - Semiconductor quantum wires - Semiconductor superlattices;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We review two approaches to fabricate CdTe based nanostructures. The first one is based on etching techniques with a new process step consisting in a controlled etch by anodic oxidation. We show that narrow quantum wires and dots can be fabricated using this process with high optical quality for wires smaller than 100 nm. The second one is based on a strain confinement effect achieved by the growth of a quantum well on a (110) cleaved surface on top of a strained superlattice.
引用
收藏
页码：99 / 104
相关论文
共 50 条
  • [1] FABRICATION AND OPTICAL-PROPERTIES OF QUANTUM DOTS AND WIRES
    ANDREWS, SR
    ARNOT, HEG
    SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (04) : 433 - 439
  • [2] OPTICAL-PROPERTIES OF CDTE/CDZNTE WIRES AND DOTS FABRICATED BY A FINAL ANODIC-OXIDATION ETCHING
    GOURGON, C
    DANG, LS
    MARIETTE, H
    VIEU, C
    MULLER, F
    APPLIED PHYSICS LETTERS, 1995, 66 (13) : 1635 - 1637
  • [3] Optical Properties of Strained CdZnTe/ZnTe Quantum Dots
    Park, Seoung-Hwan
    Hong, Woo-Pyo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (06) : 2517 - 2521
  • [4] FABRICATION AND OPTICAL-PROPERTIES OF GAAS QUANTUM WIRES AND DOTS BY MOCVD SELECTIVE GROWTH
    ARAKAWA, Y
    NAGAMUNE, Y
    NISHIOKA, M
    TSUKAMOTO, S
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 1082 - 1088
  • [5] CdTe/ZnTe quantum dots - growth and optical properties
    Mackowski, S
    THIN SOLID FILMS, 2002, 412 (1-2) : 96 - 106
  • [6] Optical properties of semiconductor quantum structures CdTe/ZnSe: Contribution of CdTe quantum dots
    Van Dao, Lap
    Lowe, Martin
    Hannaford, Peter
    Makino, Hisao
    Takai, Toshiaki
    Yao, Takafumi
    International Journal of Nanoscience, 2004, 3 (03) : 265 - 272
  • [7] Nonlinear optical properties of semiconducting quantum wires and dots
    Dneprovskii, VS
    USPEKHI FIZICHESKIKH NAUK, 1996, 166 (04): : 432 - 434
  • [8] Theory of optical properties of quantum wells, wires and dots
    Haug, H
    SPECTROSCOPY OF SYSTEMS WITH SPATIALLY CONFINED STRUCTURES, 2003, 90 : 261 - 322
  • [9] FABRICATION OF SILICON QUANTUM WIRES AND DOTS
    HIRAI, Y
    MORIMOTO, K
    NIWA, M
    YUKI, K
    YASUI, J
    IEICE TRANSACTIONS ON ELECTRONICS, 1994, E77C (09) : 1426 - 1430
  • [10] Fabrication and optical properties of ZnO quantum dots
    Zhang, X. H.
    Chua, S. J.
    Yong, A. M.
    Chow, S. Y.
    Yang, H. Y.
    Lau, S. P.
    Yu, S. F.
    Sun, X. W.
    SEMICONDUCTOR PHOTONICS: NANO-STRUCTURED MATERIALS AND DEVICES, 2008, 31 : 71 - +
12345