Two-Stage Reduction Process for silicon production

被引：0

作者：

Tada, Mitsuhiro ^{[1
]}

Hirasawa, Masahiro ^{[1
]}

机构：

[1] Inst. for Adv. Materials Processing, Tohoku University, 2-1-1 Katahira, Aobaku, Sendai, 980-8511, Japan

来源：

High Temperature Materials and Processes | 2000年 / 19卷 / 03期

关键词：

Kinetic theory - Molten materials - Ore reduction - Silica - Silicon carbide - Smelting;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A new `Two-Stage Reduction Process' is proposed for the production of high purity silicon. The porous SiC separates molten SiO2 from an evacuated chamber. In the first stage, the molten SiO2 reacts with SiC to produce gaseous SiO. In the second stage, SiO is sucked through the porous SiC wall and is reduced to Si. The fundamental potential of this process is examined by experiments and theoretical considerations. The conditions for the formation of Si are investigated. The Si formation rate and the rate controlling steps of this process are discussed on the basis of the kinetic theory.

引用

页码：281 / 297

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