Re-emission of He from α-SiC irradiation with 200 keV He ions

被引：0
|
作者：
Nishijima, T. [1 ]
Fukuda, A. [1 ]
机构：
[1] Electrotechnical Lab, Japan
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1988年 / B33卷 / 1-4期
关键词：
Heat Treatment--Annealing - Helium - Ions - Microscopic Examination--Scanning Electron Microscopy - Nuclear Reactors; Thermonuclear--Materials;
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学科分类号：
摘要：
Silicon carbide (α-SiC) is a candidate coating material for fusion reactors. Sintered α-SiC samples were irradiated with 200 kev He ions in the fluence range from 1×1015 to 1×1020 ions/cm2 at room temperature. Re-emission rates of injected He atoms were measured in the subsequent annealing process from 50 to 1500°C. The re-emission started around 350°C for the samples irradiated with various fluences and a peak due to gas burst was observed around 1000°C for the irradiation at fluences above 1×1018 ions/cm2. High retention states of He atoms above 1500°C were observed and the retention fraction increased with irradiation fluence. Microstructural changes observed by SEM after irradiation and after annealing are discussed.
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页码：765 / 767
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