共 50 条
- [31] Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (9 A):
- [36] Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy Semiconductors, 2008, 42 : 651 - 654
- [38] Effect of indium doping on gallium arsenide growth in molecular-beam epitaxy Mikroelektronika, 1993, (04): : 71 - 81
- [39] SURFACE STUDIES DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 838 - 846