Theoretical study of antisite arsenic incorporation in the low temperature molecular beam epitaxy of gallium arsenide

被引:0
|
作者
Muthuvenkatraman, S.
Gorantla, Suresh
Venkat, Rama
Dorsey, Donald L.
机构
来源
Journal of Applied Physics | 1998年 / 83卷 / 11 pt 1期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Quantitative detection of oxygen contamination related traps in gallium arsenide epitaxial layer grown by molecular beam epitaxy at low temperature
    Lau, Wai Shing
    Goo, Chuen Hang
    Chong, Tow Chong
    Chu, Paul K.
    Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (9 A):
  • [32] Arsenic incorporation in GaN during growth by molecular beam epitaxy
    Foxon, CT
    Novikov, SV
    Li, T
    Campion, RP
    Winser, AJ
    Harrison, I
    Kappers, MJ
    Humphreys, CJ
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 510 - 514
  • [33] Exposure to gallium arsenide nanoparticles in a research facility: a case study using molecular beam epitaxy
    Rizzo, Marco
    Bordignon, Michele
    Bertoli, Paolo
    Biasiol, Giorgio
    Crosera, Matteo
    Magnano, Greta Camilla
    Marussi, Giovanna
    Negro, Corrado
    Filon, Francesca Larese
    NANOTOXICOLOGY, 2024, 18 (03) : 259 - 271
  • [34] Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
    Fontcuberta i Morral, A.
    Colombo, C.
    Abstreiter, G.
    Arbiol, J.
    Morante, J. R.
    APPLIED PHYSICS LETTERS, 2008, 92 (06)
  • [35] Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy
    Sidorov, G. Yu.
    Mikhailov, N. N.
    Varavin, V. S.
    Ikusov, D. G.
    Sidorov, Yu. G.
    Dvoretskii, S. A.
    SEMICONDUCTORS, 2008, 42 (06) : 651 - 654
  • [36] Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy
    G. Yu. Sidorov
    N. N. Mikhaĭlov
    V. S. Varavin
    D. G. Ikusov
    Yu. G. Sidorov
    S. A. Dvoretskiĭ
    Semiconductors, 2008, 42 : 651 - 654
  • [37] THE GROWTH OF GALLIUM-ARSENIDE ON SI(100) BY MOLECULAR-BEAM EPITAXY
    MOORE, WT
    DEVINE, RLS
    MAIGNE, P
    HOUGHTON, DC
    BARIBEAU, JM
    DENHOFF, MW
    JACKMAN, TE
    KORNELSEN, EV
    SPRINGTHORPE, AJ
    MANDEVILLE, P
    CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) : 904 - 908
  • [38] Effect of indium doping on gallium arsenide growth in molecular-beam epitaxy
    Bogonin, I.A.
    Ioshkin, V.A.
    Kvit, A.V.
    Orlikovskij, A.A.
    Mikroelektronika, 1993, (04): : 71 - 81
  • [39] SURFACE STUDIES DURING MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE
    PLOOG, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 838 - 846
  • [40] GERMANIUM GALLIUM-ARSENIDE ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY
    BAIRD, RJ
    HOLLOWAY, H
    TAMOR, MA
    HURLEY, MD
    VASSELL, WC
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 226 - 236