Theoretical study of antisite arsenic incorporation in the low temperature molecular beam epitaxy of gallium arsenide

被引：0
|
作者：
Muthuvenkatraman, S.
Gorantla, Suresh
Venkat, Rama
Dorsey, Donald L.
机构：
来源：
Journal of Applied Physics | 1998年 / 83卷 / 11 pt 1期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] EPITAXY OF SILICON DOPED GALLIUM ARSENIDE BY MOLECULAR BEAM METHOD
    CHO, AY
    HAYASHI, I
    METALLURGICAL TRANSACTIONS, 1971, 2 (03): : 777 - &
  • [22] SYSTEM RELATED IMPURITY INCORPORATION DURING THE GROWTH OF GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY
    GRANGE, JD
    VACUUM, 1982, 32 (08) : 477 - 480
  • [23] Arsenic incorporation in HgCdTe grown by molecular beam epitaxy
    Aqariden, F
    Wijewarnasuriya, PS
    Sivananthan, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1309 - 1311
  • [24] Arsenic incorporation in HgCdTe grown by molecular beam epitaxy
    Wijewarnasuriya, PS
    Sivananthan, S
    APPLIED PHYSICS LETTERS, 1998, 72 (14) : 1694 - 1696
  • [25] Application of the bounds-analysis approach to arsenic and gallium antisite defects in gallium arsenide
    Wright, A. F.
    Modine, N. A.
    PHYSICAL REVIEW B, 2015, 91 (01):
  • [26] Gallium arsenide crystalline nanorods grown by molecular-beam epitaxy
    Lee, HG
    Jeon, HC
    Kang, TW
    Kim, TW
    APPLIED PHYSICS LETTERS, 2001, 78 (21) : 3319 - 3321
  • [27] IRON DOPING IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY
    COVINGTON, DW
    COMAS, J
    YU, PW
    APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1094 - 1096
  • [28] A study on the validity of the skew scattering model for the anomalous Hall Effect in low-temperature molecular-beam epitaxy gallium manganese arsenide
    Kim, YS
    Jeong, IT
    Woo, JC
    Khim, ZG
    Lee, JS
    Choi, HK
    Oh, YS
    Kim, KH
    Park, YD
    Chun, SH
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (02) : 306 - 312
  • [29] Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature
    Boitsov, A. V.
    Bert, N. A.
    Musikhin, Yu. G.
    Chaldyshev, V. V.
    Yagovkina, M. A.
    Preobrazhenskii, V. V.
    Putyato, M. A.
    Semyagin, B. R.
    SEMICONDUCTORS, 2006, 40 (07) : 758 - 762
  • [30] Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature
    A. V. Boĭtsov
    N. A. Bert
    Yu. G. Musikhin
    V. V. Chaldyshev
    M. A. Yagovkina
    V. V. Preobrazhenskiĭ
    M. A. Putyato
    B. R. Semyagin
    Semiconductors, 2006, 40 : 758 - 762
12345