共 34 条
- [1] X-RAY SPECTROSCOPIC STUDY OF THE DISTRIBUTION OF GERMANIUM IONS IMPLANTED IN SILICON. 1981, (N 7): : 14 - 17
- [2] X-RAY TOPOGRAPHIC INVESTIGATION OF STRUCTURAL CHANGES IN SILICON SINGLE CRYSTALS UNDER THE ACTION OF A LASER BEAM. Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1975, 17 (09): : 1752 - 1754
- [3] X-RAY TOPOGRAPHIC CAMERA. Instruments and Experimental Techniques (English Translation of Pribory I Tekhnika Eksperimenta), 1975, 18 (5 pt 2): : 1596 - 1598
- [4] X-RAY POLARIZATION ACTIVITY OF QUARTZ AND SILICON SINGLE CRYSTALS. 1982, V 27 (N 1): : 129 - 130
- [5] X-RAY DIFFRACTION TOPOGRAPHIC CHARACTERIZATION OF CRYSTAL DEFECTS IN LITHIUM NIOBATE SINGLE CRYSTALS. 1982, V 11 (N 5): : 271 - 274
- [7] X-RAY TOPOGRAPHIC STUDY OF THE HIGH-CONCENTRATION PHOSPHORUS DIFFUSION. Acta Technica (Budapest), 1975, 80 (3-4): : 353 - 368
- [8] STUDY OF ELECTRON-IMPACT IONIZATION, X-RAY PHOTOIONIZATION, AND X-RAY PHOTOEMISSION CURRENTS IN SILICON DIODE ARRAY CAMERA TUBES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (03): : 561 - 566
- [10] X-RAY DIFFRACTION METHOD OF EVALUATING THE CONCENTRATION OF DISLOCATION LOOPS IN STRONGLY IRRADIATED MATERIALS. Physics of Metals and Metallography, 1980, 50 (02): : 129 - 134