Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga 0.65N Schottky diodes

被引:0
|
作者
Kim, Jong Kyu [1 ]
Jang, Ho Won [1 ]
Lee, Jong-Lam [1 ]
机构
[1] Dept. of Mat. Sci. and Engineering, Pohang Univ. of Sci. and Technology, Pohang, Kyungbuk 790-784, Korea, Republic of
来源
Journal of Applied Physics | 2003年 / 94卷 / 11期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:7201 / 7205
相关论文
共 50 条
  • [1] Current conduction mechanism of Pt/GaN and Pt/Al0.35Ga0.65N Schottky diodes
    Kim, JK
    Jang, HW
    Lee, JL
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (11) : 7201 - 7205
  • [2] Schottky gate effects on transport properties of Al0.35Ga0.65N/GaN heterostructures
    Asgari, A.
    Kalafi, M.
    Faraone, L.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2333 - 2337
  • [3] ` Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes
    Roul, Basanta
    Kumar, Mahesh
    Rajpalke, Mohana K.
    Bhat, Thirumaleshwara N.
    Sinha, Neeraj
    Kalghatgi, A. T.
    Krupanidhi, S. B.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
  • [4] p-GaN/Al0.35Ga0.65N/GaN quantum-well ultraviolet Schottky photodetector
    State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
    Pan Tao Ti Hsueh Pao, 2006, 10 (1861-1865):
  • [5] Hydrogen response mechanism of Pt-GaN Schottky diodes
    Schalwig, J
    Müller, G
    Karrer, U
    Eickhoff, M
    Ambacher, O
    Stutzmann, M
    Görgens, L
    Dollinger, G
    APPLIED PHYSICS LETTERS, 2002, 80 (07) : 1222 - 1224
  • [6] Current transport properties of Pt/n-GaN Schottky diodes with ZnO interlayers
    Kim, Hogyoung
    Jung, Myeong Jun
    Choi, Byung Joon
    SOLID STATE COMMUNICATIONS, 2022, 344
  • [7] Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity
    Shokhovets, S
    Fuhrmann, D
    Goldhahn, R
    Gobsch, G
    Ambacher, O
    Hermann, M
    Karrer, U
    Eickhoff, M
    APPLIED PHYSICS LETTERS, 2003, 82 (11) : 1712 - 1714
  • [8] CURRENT SUPPRESSION INDUCED BY CONDUCTION-BAND DISCONTINUITY IN AL0.35GA0.65AS-GAAS N-PARA-HETEROJUNCTION DIODES
    WU, CM
    YANG, ES
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2261 - 2263
  • [9] Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures
    Lo, I
    Tsai, JK
    Tu, LW
    Hsieh, KY
    Tsai, MH
    Liu, CS
    Huang, JH
    Elhamri, S
    Mitchel, WC
    Sheu, JK
    APPLIED PHYSICS LETTERS, 2002, 80 (15) : 2684 - 2686
  • [10] Analysis of geometrical magnetoresistance Al0.35Ga0.65N/GaN MODFETs
    Umana-Membreno, GA
    Dell, JM
    Parish, G
    Faraone, L
    COMMAD 2002 PROCEEDINGS, 2002, : 393 - 396