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SMALL-SCALE PHYSICS FOR LARGE-SCALE ELECTRONIC CIRCUITS.
被引：0
作者：
Frey, Jeffrey
机构：
来源：
Engineering: Cornell Quarterly
|
1983年
/
18卷
/
03期
关键词：
SEMICONDUCTOR DEVICES;
BIPOLAR - SEMICONDUCTOR DEVICES;
MOS - Computer Simulation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Size reduction is a major concern of designers and researchers of VLSI circuits. This paper contributes to a basic understanding of the physics lying behind the operation of very small devices. Behavior of electrons in VLSI devices, and computer simulation for MOS and bipolar devices are described along with reducing the effects of parasitic elements.
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页码：12 / 15
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