SIGNAL-PROCESSING APPLICATIONS OF CHARGE-COUPLED DEVICES.

被引：0

作者：

Dutta Roy, S.C.

Bhattacharyya, A.B.

Vasi, J.M.

Das, V.G.

Shankar, L.

Kapur, Navin

机构：

来源：

| 1978年 / 24卷 / 10-11期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTOR DEVICES, CHARGE COUPLED

引用

页码：400 / 418

共 44 条

[21] Signal-Processing Algorithms Realized Via Fast Fourier Transform.
Kukharev, G.A.
Tupikov, V.D.
Izvestia vyssih ucebnyh zavedenij. Priborostroenie, 1980, 23 (06): : 52 - 56
[22] DETERMINATION OF THE SURFACE MOBILITY IN A CHARGE-COUPLED METAL-INSULATOR-SEMICONDUCTOR STRUCTURE.
Sysoev, B.I.
Antyushin, V.F.
Strygin, V.D.
Soviet physics. Semiconductors, 1986, 20 (01): : 28 - 30
[23] STATIC PROTECTION - 1. CAUSES OF STATIC CHARGE DEVELOPMENT AND EFFECTS ON ELECTRONIC DEVICES.
Berbeco, George R.
Insulation, circuits, 1980, 26 (03): : 20 - 22
[24] 16-Bit Digital Signal-processing System for Audio Signals.
Herla, Siegbert
Sedlmeyer, Robert
Rundfunktechnische Mitteilungen, 1981, 25 (06): : 249 - 259
[25] GAAS INTEGRATED-CIRCUIT DEVELOPMENT FOR GIGABIT-RATE SIGNAL-PROCESSING
UPADHYAYULA, LC
SMITH, R
MATARESE, R
RCA REVIEW, 1981, 42 (04): : 522 - 541
[26] CHARGE-COUPLED-DEVICES TACKLE TV IMAGING
KING, AP
FARRIER, M
ELECTRONIC DESIGN, 1981, 29 (16) : 183 - 190
[27] CHARGE-COUPLED-DEVICES IN GALLIUM-ARSENIDE
DEYHIMY, I
ANDERSON, RJ
EDEN, RC
HARRIS, JS
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (05): : 278 - 286
[28] Analysis of the Small-Signal Response of Static Anode Domains in Gunn-Effect Devices.
Schueffny, R.
Elschner, H.
Goetz, R.
Hofmann, K.
Braeuer, K.
1978, 8 (01): : 3 - 13
[29] SIMPLE-MODEL AND STUDY OF CHARGE HANDLING AND INJECTION IN CHARGE-COUPLED-DEVICES
FERGUSON, RS
RYAN, WD
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (06): : 218 - 224
[30] VIDEO SIGNAL-PROCESSING TECHNOLOGY FOR WIDEBAND ANALOG CHANNEL-DIVIDED SEGMENT RECORDING VCR
TAKAHASHI, H
FURUHATA, T
ITO, T
HAMAGUCHI, M
IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, 1988, 34 (03) : 552 - 559

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