Properties of cadmium sulfide thin films deposited by chemical bath deposition with ultrasonication

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Div. of Mat. Science and Engineering, Korea University, 5 Anam-dong, Sungbuk-ku, Seoul 136-701, Korea, Republic of [1 ]
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Met. Mater. Int. | / 4卷 / 265-271期
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Optical films - Cadmium sulfide - Thin films - II-VI semiconductors - Energy gap - Solutions - Deposition - Surface roughness - Atomic force microscopy - Optical properties;
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Ultrasonic agitation was applied during the chemical bath deposition of CdS thin films. Ultrasonication resulted in a dramatic change in the surface morphology, growth rate, and optical properties of CdS films. There were virtually no colloidal particles adsorbed on the surface. The surface roughness measured by atomic force microscopy was reduced by a factor of two. Band gap energy increased to 2.39 eV from 2.37 eV. X-ray patterns showed that the preferred orientation changed from hexagonal (002)/cubic (111) to hexagonal (101). Optical transmission improved in the wavelength range larger than 520nm. The chemical reaction for CdS formation started at a lower temperature under ultrasonication, and dense films were obtained even when the chemical composition of the aqueous solution deviated far from optimum conditions.
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