Data-based load-pull simulation for large-signal transistor model validation

被引：0

作者：

QUALCOMM Inc, San Diego, United States ^{[1
]}

机构：

来源：

Microwave J | / 3卷 / 4pp期

关键词：

Computer simulation - Electric impedance - Electric impedance measurement - Electric loads - Harmonic analysis - Mathematical models - MESFET devices - Semiconducting gallium arsenide;

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摘要：

A new method for large-signal transistor model validation is described. The method uses measured load-tuner S-parameter data at fundamental and harmonic frequencies, synchronized properly, to present load impedances exactly as seen by the device under test during load pull. Previous methods of large-signal model validation were performed without incorporating the effect of harmonic termination. Measured versus simulated results for a 1 millimeter GaAs MESFET at 2 GHz are presented.

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