PARASITIC MODULATION OF A SIGNAL IN A FIELD-EFFECT TRANSISTOR POWER AMPLIFIER.

被引：0
|
作者：
Zavrazhnov, Yu.V.
Pupykin, G.A.
机构：
来源：
Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika) | 1981年 / 35-36卷 / 09期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
AMPLIFIERS, POWER TYPE
引用
收藏
页码：140 / 142
相关论文
共 50 条
  • [31] Current modulation of a hygroscopic insulator organic field-effect transistor
    Bäcklund, TG
    Sandberg, HGO
    Osterbacka, R
    Stubb, H
    APPLIED PHYSICS LETTERS, 2004, 85 (17) : 3887 - 3889
  • [32] A small signal model for Carbon Nanotube Field-Effect Transistor
    Zhang, Yuming
    Yang, Tao
    Yang, Yang
    Xia, Lei
    Xu, Ruimin
    2018 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC), 2018, : 366 - 368
  • [33] BACK-GATED FIELD-EFFECT IN A DOUBLE HETEROSTRUCTURE MODULATION-DOPED FIELD-EFFECT TRANSISTOR
    PATIL, MB
    AGARWALA, S
    MORKOC, H
    ELECTRONICS LETTERS, 1988, 24 (15) : 925 - 926
  • [34] GaAs/AlGaAs field-effect transistor for tunable terahertz detection and spectroscopy with built-in signal modulation
    Suzuki, Daichi
    Oda, Shunri
    Kawano, Yukio
    APPLIED PHYSICS LETTERS, 2013, 102 (12)
  • [35] Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor
    Wang Xin
    Lu Wu
    Wu Xue
    Ma Wu-Ying
    Cui Jiang-Wei
    Liu Mo-Han
    Jiang Ke
    ACTA PHYSICA SINICA, 2014, 63 (22) : 226101
  • [36] Investigation of Parasitic Coupling of THz Radiation to a Large Area Field-Effect Transistor
    Regensburger, Stefan
    Winnerl, Stephan
    Klopf, J. Michael
    Lu, Hong
    Gossard, Arthur C.
    Preu, Sascha
    2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2017,
  • [37] Power amplifier of field effect transistor in X wave band
    Chen, Yingjuan
    1600,
  • [38] 1-BAND LOW-NOISE AMPLIFIER WITH FIELD-EFFECT TRANSISTOR
    MUTZIG, JP
    REVUE TECHNIQUE THOMSON-CSF, 1978, 10 (04): : 775 - 793
  • [39] SWITCHING TIMES OF A MODERATE POWER GAAS FIELD-EFFECT TRANSISTOR
    NAPOLI, LS
    REICHERT, WF
    DEBRECHT, RE
    DREEBEN, AB
    RCA REVIEW, 1971, 32 (04): : 645 - &
  • [40] INP FIELD-EFFECT TRANSISTOR FOR MICROWAVE-POWER AMPLIFICATION
    ARMAND, M
    BUI, DV
    CHEVRIER, J
    LINH, NT
    REVUE TECHNIQUE THOMSON-CSF, 1984, 16 (01): : 47 - 98
12345