共 50 条
Electronic properties of U2Ni2Sn
被引:0
|作者:
Research Cent for Extreme Materials, Osaka, Japan
[1
]
机构:
来源:
关键词:
Acknowledgements: This work is part of the research program of the 'Stichting voor Fundamenteel Onderzoek der Materie (FOM)';
by the Grant Agency of The Czech Republic (grant no. 202/93/0184). Support to A.S. and J.M.W. given in the framework of the EC funded training program HC&M is acknowledged;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
6
引用
收藏
相关论文