共 50 条
- [21] STRUCTURE AND EVOLUTION OF THE DISPLACEMENT FIELD IN HYDROGEN-IMPLANTED SILICON PHYSICAL REVIEW B, 1990, 41 (18): : 12607 - 12618
- [22] Behavior of implanted hydrogen in thermally stimulated blistering in silicon RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2003, 158 (11-12): : 771 - 781
- [23] TEMPERATURE AND DOSE DEPENDENCE OF DAMAGE ACCUMULATION IN HYDROGEN-IMPLANTED SILICON JOURNAL OF METALS, 1985, 37 (08): : A21 - A21
- [26] Effect of substrate orientation on microstructure of hydrogen-implanted silicon wafers Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2003, 24 (12): : 1285 - 1288
- [29] Investigation of Blistering Phenomena in Hydrogen-Implanted GaN and AlN for Thin Film Layer Transfer Applications ADVANCES IN GAN, GAAS, SIC AND RELATED ALLOYS ON SILICON SUBSTRATES, 2008, 1068 : 129 - +
- [30] Fracture in Hydrogen-Implanted Germanium ION IMPLANTATION TECHNOLOGY 2008, 2008, 1066 : 217 - +