Influence of O2 on growth of diamond films by microwave plasma chemical vapor deposition

被引：0

作者：

Shu, Xingsheng ^{[1
]}

Wu, Qinchong ^{[1
]}

Liang, Rongqing ^{[1
]}

机构：

[1] Inst. of Plasma Phys., Chinese Acad. of Sci., Hefei 230031, China

来源：

Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology | 2001年 / 21卷 / 04期

关键词：

Chemical vapor deposition - Gases - Microwaves - Oxygen - Plasmas;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Diamond films were synthesized form CH4/H2/O2 gas mixture by microwave plasma chemical vapor deposition (MWPCVD) in a water-cooled reaction chamber. Influence of O2 concentration on the film growth was studied with laser Raman spectroscopy and scanning electron microscopy (SEM). The results show that very low O2 concentration markedly promotes diamond film deposition but slightly suppresses the amorphous carbon growth. Consequently, the content of amorphous carbon in the diamond films was drastically reduced. In contrast, higher O2 concentration slows down the deposition of diamond more severely than that of amorphous carbon and results in higher content of amorphous carbon in the films. In addition, the existence of O2 favorably affects the growth of diamond films with smaller grain sizes.

引用

页码：281 / 284