Analytical model of collector current density and base transit time

被引：0
|
作者：
Ma, Pingxi [1 ]
Zhang, Lichun [1 ]
Wang, Yangyuan [1 ]
机构：
[1] Peking Univ, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1995年 / 16卷 / 11期
关键词：
Bipolar transistors;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：862 / 868
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