Analytical model of collector current density and base transit time

被引：0

作者：

Ma, Pingxi ^{[1
]}

Zhang, Lichun ^{[1
]}

Wang, Yangyuan ^{[1
]}

机构：

[1] Peking Univ, Beijing, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1995年 / 16卷 / 11期

关键词：

Bipolar transistors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：862 / 868

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