Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures

被引:0
|
作者
Center for Innovation in Learning, Carnegie Mellon University, Pittsburgh, PA 15213, United States [1 ]
不详 [2 ]
机构
来源
Appl Phys Lett | / 17卷 / 2405-2407期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Defect formation and recombination processes in p-type modulation-doped Si epilayers
    Buyanova, IA
    Chen, WM
    Henry, A
    Ni, WX
    Hansson, GV
    Monemar, B
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 479 - 483
  • [33] PARALLEL DISPERSION IN P-TYPE MODULATION-DOPED QUANTUM WELLS OF INTERMEDIATE THICKNESS
    EKENBERG, U
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (03) : 351 - 354
  • [34] Electronic transport in modulation-doped InSb quantum well heterostructures
    Orr, J. M. S.
    Gilbertson, A. M.
    Fearn, M.
    Croad, O. W.
    Storey, C. J.
    Buckle, L.
    Emeny, M. T.
    Buckle, P. D.
    Ashley, T.
    PHYSICAL REVIEW B, 2008, 77 (16)
  • [35] Optimization of p-type AlGaN/GaN and GaN/InGaN superlattice design for enhanced vertical transport
    Kauser, MZ
    Osinsky, A
    Dong, JW
    Hertog, B
    Dabiran, A
    Chow, PP
    GaN, AIN, InN and Their Alloys, 2005, 831 : 239 - 244
  • [36] Defect formation and recombination processes in p-type modulation-doped Si epilayers
    Buyanova, I.A.
    Chen, W.M.
    Henry, A.
    Ni, W.X.
    Hansson, G.V.
    Monemar, B.
    Materials Science Forum, 1995, 196-201 (pt 1): : 479 - 484
  • [37] Photoelectrochemical etching of p-type GaN heterostructures
    Tamboli, Adele C.
    Hirai, Asako
    Nakamura, Shuji
    DenBaars, Steven P.
    Hu, Evelyn L.
    APPLIED PHYSICS LETTERS, 2009, 94 (15)
  • [38] P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE
    Usikov, A
    Kovalenkov, O
    Ivantsov, V
    Sukhoveev, V
    Dmitriev, V
    Shmidt, N
    Poloskin, D
    Petrov, V
    Ratnikov, V
    GAN, AIN, INN AND THEIR ALLOYS, 2005, 831 : 453 - 457
  • [39] Theoretical analysis of the threshold current density in GaN/AlGaN strained quantum well lasers with a modulation-doped structure
    Niwa, A
    Ohtoshi, T
    Kuroda, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (6B): : L771 - L773
  • [40] Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures
    Wei, Qiyuan
    Wu, Zhihao
    Sun, Kewei
    Ponce, Fernando A.
    Hertkorn, Joaquim
    Scholz, Ferdinand
    APPLIED PHYSICS EXPRESS, 2009, 2 (12)