Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures

被引：0
|
作者：
Center for Innovation in Learning, Carnegie Mellon University, Pittsburgh, PA 15213, United States [1 ]
不详 [2 ]
机构：
来源：
Appl Phys Lett | / 17卷 / 2405-2407期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures
    Hsu, L
    Walukiewicz, W
    APPLIED PHYSICS LETTERS, 1999, 74 (17) : 2405 - 2407
  • [2] Weakly localized transport in modulation-doped GaN/AlGaN heterostructures
    Buyanov, AV
    Sandberg, JA
    Sernelius, BE
    Holtz, PO
    Bergman, JP
    Monemar, B
    Amano, H
    Akasaki, I
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 758 - 762
  • [3] Improved Mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices
    Waldron, EL
    Graff, JW
    Schubert, EF
    Dabiran, AM
    GAN AND RELATED ALLOYS-2001, 2002, 693 : 823 - 828
  • [4] Improved mobilities and resistivities in modulation-doped p-type AlGaN/GaN superlattices
    Waldron, EL
    Graff, JW
    Schubert, EF
    APPLIED PHYSICS LETTERS, 2001, 79 (17) : 2737 - 2739
  • [5] Linear and Nonlinear Electron Transport in Modulation-Doped AlGaN/GaN Heterostructures
    Cao, J.C., 1600, Japan Society of Applied Physics (43):
  • [6] Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures
    Cao, JC
    Yao, W
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (01): : 50 - 53
  • [7] Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures
    Buyanov, AV
    Bergman, JP
    Sandberg, JA
    Sernelius, BE
    Holtz, PO
    Dalfors, J
    Monemar, B
    Amano, H
    Akasaki, I
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 753 - 757
  • [8] Electron mobility in modulation-doped AlGaN-GaN heterostructures
    Gaska, R
    Shur, MS
    Bykhovski, AD
    Orlov, AO
    Snider, GL
    APPLIED PHYSICS LETTERS, 1999, 74 (02) : 287 - 289
  • [9] P-TYPE MODULATION-DOPED HGCDTE
    HAN, JW
    HWANG, S
    LANSARI, Y
    HARPER, RL
    YANG, Z
    GILES, NC
    COOK, JW
    SCHETZINA, JF
    SEN, S
    APPLIED PHYSICS LETTERS, 1989, 54 (01) : 63 - 65
  • [10] Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures
    Dziuba, Z
    Antoszewski, J
    Dell, JM
    Faraone, L
    Kozodoy, P
    Keller, S
    Keller, B
    DenBaars, SP
    Mishra, UK
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) : 2996 - 3002
12345