Scanning tunneling microscopy of (NH4)2Sx-treated GaAs surfaces annealed in vacuum

被引：0
|
作者：
Tanimoto, Masafumi [1 ]
Yokoyama, Haruki [1 ]
Shinohara, Masanori [1 ]
Inoue, Naohisa [1 ]
机构：
[1] NTT LSI Lab, Kanagawa, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1994年 / 33卷 / 3 A期
关键词：
Semiconducting gallium arsenide;
D O I：
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摘要：
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