Colossal hopping magnetoresistance of GaAs/ErAs nanocomposites

被引:0
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作者
Petukhov, A.G. [1 ]
Foygel, M. [1 ]
Chantis, A. [1 ]
机构
[1] South Dakota Sch of Mines and, Technology, Rapid City, United States
来源
Materials Research Society Symposium - Proceedings | 2000年 / 581卷
关键词
Electric conductivity of solids - Erbium compounds - Magnetic field effects - Magnetic semiconductors - Magnetization - Magnetoresistance - Mathematical models - Semiconducting gallium arsenide - Thermodynamic properties;
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摘要
A theory of bound magnetic polaron (BMP) hopping, driven by thermodynamic fluctuations of the local magnetization, has been developed. It is based on a two-site model of BMP's. The BMP hopping probability rate was calculated in the framework of the 'Golden Rule' approach by using the Ginzburg-Landau effective Hamiltonian method. The theory explains the main features of hopping resistivity observed in a variety of experiments in dilute magnetic semiconductors and magnetic nanocomposites, namely: (a) negative giant magnetoresistance, the scale of which is governed by a magnetic polaron localization volume, and (b) low magnetic field positive magnetoresistance, which usually preceeds negative magnetoresistance.
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页码:629 / 634
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