High-density layer at the SiO2/Si interface observed by difference X-ray reflectivity

被引：0
作者：
Awaji, Naoki [1 ]
Ohkubo, Satoshi [1 ]
Nakanishi, Toshiro [1 ]
Sugita, Yoshihiro [1 ]
Takasaki, Kanetake [1 ]
Komiya, Satoshi [1 ]
机构：
[1] Fujitsu Lab Ltd, Atsugi, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1996年 / 35卷 / 1 B期
关键词：
D O I：
10.1143/jjap.35.l67
中图分类号：
学科分类号：
摘要：
14
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